Units: 4 (3 Lecture/1 Discussion)
Prerequisites: EEC 140A or EEC 140 AV
Catalog Description: Electrical properties, design, models, and advanced concepts for MOSFET and bipolar devices. Introduction to junction field effect transistors (JFETs, MESFETs) and heterojunction bipolar transistors (HBTs). Fundamentals of photonic devices, including solar cells, photodetectors, LEDs and semiconductor lasers. GE Credit: SE
ABET Student Outcomes:
1) Either a Bipolar or MOS open-ended design project may be included in this course. Students will be given a set of specifications for the transistor and will be required to demonstrate a design that meets the specifications.
2) Students who have completed this course should have achieved:
a) Student Outcome 1: an ability to identify, formulate, and solve complex engineering problems by applying principles of engineering, science, and mathematics.
b) Student Outcome 6: an ability to develop and conduct appropriate experimentation, analyze and interpret data, and use engineering judgment to draw conclusions.
Expanded Course Description:
I. Semiconductor Physics
A. Atomic bonding, impurities and defects
B. Diffusion and Field in a graded-impurity region
C. Hall Effect
II. Carrier Behavior
A. Excess carriers and quasi-Fermi levels
B. Ambipolar transport
C. Scattering and lifetime mechanisms
D. Surface and interface effects
III. Advanced MOS concepts
A. Scaling and scaling theory
B. Small-feature MOS effects
C. Fabrication methods and associated phenomena
D. Simulation models
IV. Advanced Bipolar Junction Transistor concepts
A. Non-idealities of p-n junctions
B. Kirk effect and other second-order phenomena
C. Fabrication technologies and consequences on performance
D. Switching behavior, charge storage, frequency limitations
V. Other Junction Devices and Phenomena
A. Heterojunctions
B. Thyristors and SCR devices
C. Latchup
VI. Photonics
A. Optical absorption
B. Photovoltaics and solar cells
C. Photoconductors and photodetectors
D. Light-emitting diodes
E. Semiconductor lasers
