- Units: 4 (3 Lecture/1 Discussion)
Prerequisites: (ENG 17 (can be concurrent) or ENG 17V (can be concurrent)), (PHY 9D or PHY 9HE)
Catalog Description: Semiconductor device fundamentals, equilibrium and non-equilibrium statistical mechanics, conductivity, diffusion, density of states, electrons and holes, P-N junctions, Schottky junctions, field effect transistors, bipolar junction transistors. GE Credit: SE, SL
ABET Student Outcomes:
1) The student will be able to gain knowledge about crystal structures, semiconductor materials, and how semiconductor materials are used to construct different devices for different applications.
2) Students who have completed this course should have achieved: Student Outcome 1: an ability to identify, formulate, and solve complex engineering problems by applying principles of engineering, science, and mathematics.
Expanded Course Description:
I. Semiconductors, metals, and insulators
A. Crystal structure
B. Electron energy levels
C. Energy bands, density of states
II. Carriers and Conduction
A. Intrinsic and extrinsic carriers
B. Carrier concentration, Fermi level
C. Carrier transport, drift, and diffusion
D. Carrier generation and recombination
III. P-N Junction Behavior
A. P-N junctions and fundamental features
B. Schottky junctions and ohmic contacts
C. Biased junctions
D. Excess carriers and transient effects
IV. Diodes
A. Ideal I-V relationships in diodes: forward bias
B. Ideal I-V relationships in diodes: reverse bias
C. Ideal I-V relationships in diodes: breakdown
D. Small signal behavior
E. Charge storage: forward- and reverse-bias capacitance
V. Fundamentals of the MOS Transistor
A. Basic principle of MOS operation
B. The two-terminal MOS capacitor
C. Inversion layers and the transistor channel
D. Device potentials and the threshold voltage
E. The MOS transistor: basic operational characteristics
F. The body effect: substrate bias
G. Small signal operation of the MOSFET
VI. The Bipolar Transistor
A. Bipolar transistor action
B. Large-signal common-emitter gain
C. Equivalent circuit models
D. Basic small-signal operation and cutoff