Aluminum as an Ohmic Contact to Zinc Selenide
Zinc selenide is an important material due to its potential to improve visible LED and high speed, high power transistor applications. However, low resistance and robust ohmic contacts are a mandatory first step towards high-performance applications. Professor Woodall’s Research Group has demonstrated an important new way to create contacts to zinc selenide semiconductor devices while bypassing an additional metallization step by using molecular beam epitaxy to deposit single crystal aluminum films directly onto zinc selenium. The technique could greatly simplify ZnSe-based device fabrication and reduce production costs.
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